Semiconductor technology & processing5G and IoT communication

III-V devices on Si for beyond-5G RF front-end modules

While first commercial 5G wireless networks are going live, imec prepares the next generation mobile handsets – for 5G and beyond-5G applications. In these handsets, front-end modules will have to operate at mm-wave frequencies and combine high speed with high output power. In an article that appeared in Compound Semiconductor, Abhitosh Vais, researcher at imec, introduces functional III-V heterojunction bipolar transistors (HBTs) on 300mm Si substrates as one of the possible routes towards 5G and beyond front-end modules. Key to the results is the ability to grow defect-free III-V layers on 300mm Si substrates. 

Read the full article in Compound Semiconductor (pgs 36-40). 

Want to know more? 

Read imec’s  press release on the demonstration of scalable III-V and III-N devices on Si targeting beyond 5G RF front-end modules.  

About Abhitosh Vais

Abhitosh Vais is researcher at imec, working on future analog RF technologies. He holds a Ph.D. degree in Electrical Engineering from KU Leuven. He was an Erasmus Mundus scholar in KU Leuven and Chalmers University, Sweden during 2010-12. 

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