Data Analytics for Next-Generation 2D Semiconductor Devices

At imec, we develop advanced electronic devices based on emerging 2D semiconductor materials such as MoS₂, WSe₂, and WS₂. These technologies are being explored for future low-power and high-performance electronics using device structures ranging from MOS capacitors and transistors to Hall-bar test structures.

A key challenge is the efficient extraction of meaningful device parameters from the rapidly growing volume of measurement data. To address this, we are developing a Python-based analysis framework that automatically processes electrical characterization data and extracts key figures of merit such as threshold voltage, subthreshold swing, and mobility from two-probe transistor measurements.

Your Role

The primary goal of this internship is to extend this analysis framework to support a broader range of characterization techniques and device structures, including:

• Four-probe transistor measurements
• MOS capacitor (C-V) characterization
• Hall-bar measurements
• New measurement platforms and data formats

You will develop robust algorithms for automated parameter extraction, ensure compatibility across different measurement tools, and help build a scalable software framework that researchers can use across multiple projects and technologies.

A smaller part of the project will involve qualifying new characterization equipment and validating its output against existing measurement platforms.

What You Will Learn

• Semiconductor device physics and characterization
• Electrical measurements on advanced 2D-material devices
• Scientific software development in Python
• Automated data analysis of large experimental datasets

Impact

Your development will directly accelerate imec's research on next-generation semiconductor technologies. By transforming large volumes of raw measurement data into reliable device metrics, your work will enable researchers to evaluate new devices faster, compare technologies more effectively, and gain deeper insight into the underlying device physics.