Metal-halide perovskites next-generation image sensors

The Challenge

Metal-halide perovskites have emerged as strong candidates for next-generation image sensors, thanks to their high absorption coefficients, tunable bandgaps, and compatibility with low-temperature processing. These unique properties enable the integration of perovskite photodiodes directly onto silicon readout circuits or flexible substrates—opening the door to compact, high-resolution, and high-dynamic-range imaging systems.

The challenge lies in designing and fabricating a complete photodiode stack and pixel array that harness the material advantages of perovskites while ensuring low noise, high quantum efficiency, fast response time, and pixel-level uniformity. This project aims to address these challenges by developing, fabricating, and testing optimized perovskite photodiode architectures and pixel layouts for visible to near-infrared imaging.

What You Will Do

• Design and optimize multilayer perovskite photodiode stacks, including electron/hole transport layers, absorption layer, and top/bottom contacts for maximum efficiency and minimal leakage.
• Participate in the fabrication of test devices and pixel arrays using techniques such as spin coating, evaporation, and photolithography in a cleanroom environment.
• Conduct characterization of the fabricated devices, including I-V, EQE, transient response, and noise analysis.
• Design and simulate pixel structures to assess fill factor, crosstalk, and scalability.
• Collaborate with circuit design or system teams to ensure CMOS compatibility and define key performance targets.