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Entering the nanosheet transistor era

EETimes highlights imec’s work on nanosheet, forksheet and CFET transistor development 


Several foundries recently announced to move from mainstream FinFET to nanosheet transistor architectures for the high-volume production of their 3nm or 2nm logic chips. 

In this article, Naoto Horiguchi, director CMOS device technology at imec, highlights imec’s contribution to nanosheet transistor development, and looks forward to newer generations of this promising transistor architecture, including forksheet and CFET.